eu ^zml-donduckoi lpioducti, one. j 20 stern ave. springfield, new jersey 07081 u.s.a. triacs bidirectional triode thyristors ... designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. ? blocking voltage to 600 volts ? all diffused and glass passivated junctions for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? T2800 ?four quadrant gating telephone: (973) 376-2922 T2800 triacs 8 amperes rms 200 thru 600 volts mt20- w 6 -o mt1 (to-220ab) maximum ratings (tj = 25"c unless otherwise noted.; rating peak repetitive off-state voltagec1) (tj = -40 to +100c, gate open) T2800 b d m rms on-state current (tc = +80"c) (conduction angle = 360) peak non-repetitive surge current (one full cycle, 60 hz, tj = +80c) circuit fusing (t = 8.3 ms) peak gate power (pulse width = 1 u.s) average gate power peak gate trigger current (pulse width = 1 us) operating junction temperature range storage temperature range symbol vdrm it(rms) !tsm |2t pgm pg(av) 'gtm tj tstg value 200 400 600 8 100 40 16 0.35 4 -40 to +100 -40 to +150 unit volts amps amps a2s watts watt amps c c thermal characteristics characteristic thermal resistance, junction to case symbol rsjc max 2.2 unit c/w 1 vqrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
T2800 series electrical characteristics (tc = 25"c unless otherwise noted.) characteristic peak blocking current (vd = rated vdrm. gate open) tc = 25c tc = 100c peak on-state voltage (either direction)* (ij = 30 a peak) gate trigger current (continuous dc) (vd = 12 vdc, r|_ = 12 ohms) mt2(+), g(+) T2800 mt2(+), g(-) T2800 mt2(-), g(-) T2800 mt2(-), g(+) T2800 gate trigger voltage (continuous dc) (all polarities) (vd = 12 vdc, rl = 100 ohms) (r|_ = 125 ohms, vd = vdrm. tc = 100c) holding current (either direction) (vd = 12 vdc, gate open) T2800 gate controlled turn-on time (vd = rated vdrm. it = 10 a- 'gt = 80 ma, rise time = 0.1 us) critical rate-of-rise of commutation voltage (vd = rated vdrm. 't(rms) = 8 a, commutating di/dt = 4.1 a/ms, gate unenergized, tc = 80"c) critical rate-of-rise of off-state voltage (vd = rated vdrm. exponential voltage rise, gate open, tc = 100 c) T2800 b d m symbol 'drm vtm igt vgt ih |
